SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material
SiC (Silicon Carbide) single-crystal material

SiC (Silicon Carbide) single-crystal material

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MOQ:10
Lead time:2-5周
Shipping:Air freight, land freight, sea freight
Specification Number:非标准
Product Code:C022
Product Introduction
Product name: SiC Single Crystal

Silicon carbide (SiC) is a unique semiconductor material with some excellent physical properties. It has attracted widespread attention due to its single crystal structure, unique performance advantages, wide applications, and broad development prospects.

Key properties:

In terms of structure, silicon carbide single crystals mainly have various crystal polymorphisms, including 3C-SiC, 4H-SiC, 6H-SiC, etc. These different crystal structures have their own unique properties. Among them, 4H SiC and 6H SiC are widely used due to their excellent electronic properties and high thermal conductivity.

The performance advantages of silicon carbide mainly include wide band gap, high Electron mobility, strong thermal stability, good chemical stability and excellent thermal conductivity. Among them, the wide bandgap enables SiC to have high electron penetration ability, which is conducive to operating in harsh environments such as high temperature, high pressure, and high frequency. High electron mobility and thermal conductivity make SiC have good switching performance and heat dissipation performance.

Typical use:

Silicon carbide haa wide range of applications, including power electronics, optoelectronics, high-temperature electronics, automotive electronics, etc. For example, SiC can be used as the basic material for power devices for power conversion and regulation, greatly improving energy efficiency. In the field of optoelectronics, SiC is used to make solar cells due to its ability to withstand extreme environments. In addition, SiC is also widely used in power conversion systems for electric and hybrid vehicles, bringing significant energy efficiency improvements.
 
Performance Parameter

Growth Method

PVT

Crystal Structure

Hexagonal

Lattice constant

a=3.08 Å c=15.08 Å

Stacking order

ABCACB

Band gap

2.93 eV

Hardness

9.2(mohs)

Thermal conductivity@300K

5 W/cm·K

Dielectric constant

e(11)=e(22)=9.66 e(33)=10.33

Size

10x3,10x5,10x10,15x15,,20x15,20x20,

Dia 2", 15 x 15 mm, 10x10mm

Thickness

0.5mm,1.0mm

Polishing

Single or double sided

Orientation

<001>±0.5º

Orientation accuracy:

±0.5°

Edge orientation accuracy:

2°(up to 1 ° for special requirements)

Ra:

≤5Å(5µm×5µm)

Packing

Class 100 clean bag, Class 1000 ultra clean room

 





About Us

CRYCISE – Single Crystal Substrates and Optical Crystals

Crycise OET Material is a high-tech enterprise based in Shushan New Industrial Park, Hefei, Anhui. We integrate R&D, production and sales of optoelectronic materials and material processing equipment.

We own self-built factory space and full sets of production & testing facilities. Our core technical team has more than ten years of experience in optoelectronic material growth, processing and characterization.

We supply high-quality single crystals, thin film substrates, functional crystals, optical components, ceramic substrates, sputtering targets, coating materials and crystal raw materials for universities and research institutes. Custom services including crystal orientation, cutting, grinding, polishing, testing, together with crystal growth furnaces and high-temperature sintering equipment are also available.

Committed to one-stop crystal-related solutions, we focus on stable quality, green production, advanced technology and lean management. We strive to deliver premium products, competitive pricing, reliable service and timely updates for all partners.

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25

2000

50

Production experience

Production plant

Professional technicians

1000

Serve customers

Years

m²

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Address: 1st Floor, Building 3, No. 87 Yangqiao Road, Shushan District, Hefei City

Zip Code: 230031

Tel: +86 551 6538 8116

Phone: +86 152 0988 8163

Contact: Shixi Wang

Wechat: +86 152 0988 8163

QQ: 282325269

E-mail: crycise@hfhrd.com / info@hfhrd.com

Website: http://www.crycise.com

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